Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS2) Nanoribbon Field Effect Transistors

In this work, nanoribbon field-effect-transistors (FETs) with an ultra-narrow monolayer MoS ₂ channel are investigated to understand the transverse scaling limitations of MoS ₂ FETs. It is observed that the bandgap of monolayer nanoribbon MoS ₂ can be largely affected by the passivation atoms, wherein OH passivation is more effective than H passivation. Then, impacts of passivation atoms on transport characteristics in MoS ₂ FETs with ultra-narrow MoS ₂ channel are calculated. Though higher I _on and lower I _off can be obtained even in narrow MoS ₂ FETs with O/H passivation, I _off is hard to be suppressed due to the contribution of edge states. Our results indicate that edge states engineering could be one key point to integrate MoS ₂ devices into CMOS technology.