Improved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment

Y. Y. Zhang,L. X. Qian,P. T. Lai,T. J. Dai,X. Z. Liu

IEEE Electron Device Letters（2019）

引用 22|浏览6

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摘要

Amorphous InGaZnO (a-IGZO) UV photodetectors with a metal-semiconductor-metal structure were fabricated on polyethylene terephthalate (PET) substrates, and the effects of surface fluorine plasma treatment on a-IGZO were investigated. With this treatment, the oxygen vacancies (Ovac's) at the a-IGZO surface were effectively passivated, thus reducing the shallow-level donor states and electron traps....

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关键词

Electron traps,Surface treatment,Fluorine,Plasmas,Tunneling,Schottky barriers,Radio frequency

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