A $${\mathbf{g}}_{{\mathbf{m}}}$$-boosted highly linear fully differential 3–5 GHz UWB LNA employing noise and distortion canceling technique

A novel structure is presented to optimize the noise and linearity performance of a \({\text{g}}_{\text{m}}\)-boosted common gate (CG) ultra-wide-band low noise amplifier (LNA) by exploiting noise and distortion canceling technique. The \({\text{g}}_{\text{m}}\)-booster common source amplifier provides a degree of freedom to eliminate the limitation on the noise figure (NF) improvement, at a lower transconductance for the CG transistor. The applied noise and distortion canceling technique to the \({\text{g}}_{\text{m}}\)-boosted topology is used to minimize the dominant noise contribution and the second and third order non-linearity coefficients of the first stage components. The proposed LNA is configured in a differential topology to compensate the \(IIP_{2}\) of the structure. The Forward body bias technique is utilized for operating the LNA at a lower supply voltage and power consumption. The post-layout simulation results of the LNA, including bonding and electrostatic discharge circuits, with 90 nm TSMC RF CMOS technology show a power gain of 14.5 ± 05 dB, flat NF of 2.2 ± 0.1 dB, and \(S_{11}\) less than − 9.5 dB for 3–5 GHz frequency at a power consumption of 13.8 mW from 0.7 V supply voltage. The \(IIP_{3}\) and \(IIP_{2}\) measures are obtained as + 5.2 dBm and 55 dBm, respectively.