A 6800-µm Resistor-Based Temperature Sensor With ±0.35 °C (3 σ) Inaccuracy in 180-nm CMOS.

IEEE Journal of Solid-State Circuits(2019)

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摘要
This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μm2, thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3σ) inaccuracy from -35 °C to 12...
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关键词
Temperature sensors,Resistors,Bridge circuits,Oscillators,Capacitors,Monitoring
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