A Robust BBPLL-Based 0.18- $\mu$ m CMOS Resistive Sensor Interface With High Drift Resilience Over a −40 °C–175 °C Temperature Range

IEEE Journal of Solid-State Circuits(2019)

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摘要
This paper presents a drift-resilient time-based resistive sensor interface in a 0.18- $\mu \text{m}$ CMOS technology. The interface is built around only two oscillators, a phase detector, a digital filter, and a digital-to-analog converter (DAC), resulting in a simple first-order Delta–Sigma design with a predictable transfer function. The highly digital approach not only results in a small area but also implies that only a few analog circuits are sensitive to drift. The holistic drift-resilience strategy implemented combines time-based chopping and voltage-controlled oscillator (VCO) tuning to remove the dc and low-frequency errors introduced by VCO nonidealities and drift. These techniques do not introduce a significant area and power overhead. Silicon measurements show that the proposed bang–bang phase-locked loop (BBPLL)-based sensor interface exhibits ppm-level gain drift and offset drift for the entire −40 °C–175 °C temperature range while using a single-temperature calibration scheme and no external accurate references nor components for this drift stability. The interface provides a 15-effective number of bits conversion for a 100-ms conversion time and consumes 3.41 mW of power and occupies only 0.23 mm 2 of the active area.
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关键词
Voltage-controlled oscillators,Temperature sensors,Calibration,Bridge circuits,Temperature distribution,Tuning,Temperature measurement
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