Silvaco Based Simulation Of Unequal Double Gate Junctionless Tfet With Gaas-Gasb Heterostructure

Tunneling field effect transistor (TFET) is thought to be a successor in future nanotechnology because of its low SS and off current. Junctionless TFETs are easier to fabricate and possess no random dopant fluctuations. In this paper a new heterostructure based junctionless device has been proposed with unequal gates. The proposed device has been compared with Si based TFET and equal gate TFETs. High ON current, promising I-ON/I-OFF ratio and low negative bias current has been demonstrated.