A 100MS/s 9-bit Companding SAR ADC with On-Chip Input Driver in 65nm CMOS for Multi-Carrier Communications

Midwest Symposium on Circuits and Systems Conference Proceedings(2018)

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摘要
This paper presents a 100MS/s 9b companding SAR ADC which exploits the statistical properties of broadband multi carrier signals to reduce the dynamic range requirement for the ADC. The architecture emulates the performance of a higher resolution ADC by reducing the PAPR of a multi-carrier signal to that of a single carrier. Additionally, gain-before-sampling results in reduced sampling capacitor size which lowers power and area. To verify the concept, a prototype implemented in TSMC's 65nm GP CMOS process consumes 12.27 mW at 100 MS/s while extending the dynamic range of the sub-ADC by 13 dB, and resulting in a Schreier FOM of 150.7 dB.
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关键词
TSMC GP CMOS process,Schreier FOM,higher resolution ADC,multicarrier communications,On-Chip Input Driver,9-bit companding SAR ADC,power 12.27 mW
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