Transparent p-NiO/n-ZnO heterojunction ultraviolet photodetectors prepared on flexible substrates

Transparent B and Ga co-doped ZnO (BGZO)/n-ZnO/p-NiO heterojunctions were prepared on flexible polyethylene terephthalate (PET) substrates by RF magnetron sputtering at room temperature. The heterojunction shows high transmittance above 75% in the visible region, high flexibility and a good rectifying behavior. Compared with the heterojunction without BGZO layer, the performance of the device with BGZO layer is significantly improved. The turn-on voltage and the ideality factor of the heterojunction with BGZO layer is 1.2 and 2.3, respectively. The n-BGZO/n-ZnO/p-NiO heterojunction ultraviolet (UV) detectors show high UV sensitivity and fast time response.