Experimental observation of zero DIBL in short-channel hysteresis-free ferroelectric-gated FinFET

Solid-State Electronics（2019）

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摘要

•Hysteresis-free & steep-switching ferroelectric-gated FinFET.•Negative DIBL effect in the ferroelectric-gated FinFET.•Zero DIBL is experimentally observed in the FinFET.

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关键词

Short-channel transistor,Negative capacitance,Drain-induced-barrier-lowering,Ferroelectric material

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