Excellent Structural, Optical, And Electrical Properties Of Nd-Doped Basno3 Transparent Thin Films

We epitaxially grew 7 mol. % Nd-doped BaSnO3 (NBSO) thin films on double-side polished SrTiO3 (001) single-crystal substrates and optimized the oxygen pressure (P-O2), substrate temperature (TS), and film thickness (t) to achieve excellent structural, optical, and electrical performance. By keeping TS (=800 degrees C) constant, NBSO films prepared at P-O2 = 10 Pa show the best crystallization, yielding a full-width at half-maximum (FWHM) of the x-ray diffraction rocking curve of 0.079 degrees and exhibiting a room-temperature resistivity (rho) of similar to 1.85 m Omega cm and a volume carrier density (n) of similar to 8.5 x 10(20)/cm(3). By keeping P-O2 (= 10 Pa) constant, the room-temperature rho of NBSO films could be reduced to as low as 0.5 m Omega cm by increasing TS from 700 to 825 degrees; meanwhile, the volume carrier density and mobility show the maximum of 5.04 x 10(20)/cm(3) and 24.9 cm(2)/Vs, respectively, for T-S = 825 degrees C. For all as-grown NBSO thin films, the optical transmittance in the visible wavelength region is larger than 80%. The optimized comprehensive properties of the NBSO films with FWHM = 0.11 degrees, q = 0.5 m Omega cm, Omega = 24.9 cm(2)/Vs, and T > 80% are superior to those of other rare-earth and 4d- and 5d-transition metal-doped BaSnO3 thin films. Published by AIP Publishing.