Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

•We demonstrated n-type bulk Si fin field-effect-transistors by using high temperature Phosphorus extension ion implantation process.•In the case of wide spacers and ion implanted Si source and drain, on-state resistance, drain-induced-barrier-lowering, on-state current, and off-state current were improved.•In the case of narrow spacers and Phosphorus in-situ doped Si epi source and drain, drain-induced-barrier-lowering and off-state current characteristics were significantly improved.•Impurity distribution in channel area was analyzed by scanning spread resistance microscope, and high temperature ion implantation process showed less Phosphorus diffusion.