Photoluminescence And Terahertz Time-Domain Spectroscopy Of Mbe-Grown Single-Layered Inas/Gaas Quantum Dots

We study the photoluminescence (PL) and terahertz (THz) emission characteristics of MBE-grown InAs/GaAs single-layered quantum dots. Results from temperature-dependent and excitation power-dependent PL spectroscopy have revealed the presence of energy peaks corresponding to two possible quantum dot size distributions. The THz emission was found to increase as temperature increases, which we attribute to the increase in the number of carriers undergoing transport.