Embedded Stt-Mram In 28-Nm Fdsoi Logic Process For Industrial Mcu/Iot Application

Yong Kyu Lee,Yoonjong Song,JooChan Kim, SeChung Oh, Byoung-Jae Bae, SangHumn Lee, JungHyuk Lee,UngHwan Pi,Boyoung Seo,Hyunsung Jung,Kilho Lee, HyunChul Shin,Hyuntaek Jung,Mark Pyo,Artur Antonyan, Daesop Lee, Sohee Hwang, Daehyun Jang,Yongsung Ji,Seungbae Lee, Jungman Lim, Kwan-Hyeob Koh,Kihyun Hwang,Hyeongsun Hong,Kichul Park,Gitae Jeong,Jong Shik Yoon,Es Jung

2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2018）

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摘要

We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (-40 similar to 125 degrees C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after solder reflow (260 degrees C, 90 second) and during external magnetic disturbance (550-Oe under writing). It is built on 28-nm FDSOI technology in modular format for IP reuse and has great potential to serve wide variety of applications such as IoT, and high performance MCU.

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关键词

robust cell operation,external magnetic disturbance,high performance MCU,28-nm FDSOI logic process,28-nm embedded STT-MRAM operating,industrial temperature range,industrial MCU-IoT application,high-speed MCU-IoT application

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