An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure

Muhammad Mainul Islam,Md. Nur Kutubul Alam,Md. Shamim Sarker,Md. Rafiqul Islam,Anisul Haque

IEEE Journal of the Electron Devices Society（2017）

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摘要

We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials.

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关键词

Logic gates,Analytical models,Electric potential,Field effect transistors,Mathematical model,Numerical models

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