Ultra-Low Switching Voltage Induced by Inserting SiO 2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

Chih-Cheng Shih,Wen-Jen Chen,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Tian-Jian Chu,Yi-Ting Tseng,Cheng-Hsien Wu,Wan-Ching Su,Min-Chen Chen,Hui-Chun Huang,Ming-Hui Wang,Jung-Hui Chen,Jin-Cheng Zheng,Simon M. Sze

IEEE Electron Device Letters（2016）

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摘要

A lower switching voltage of indium-tin-oxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observed reset voltage increased with temperature. To clarify the switching mechanism, conduction current f...

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关键词

Indium tin oxide,Switches,Electrodes,Resistance,Voltage measurement,Temperature measurement,Random access memory

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