A time interleaved, 10 bit SAR ADC with split capacitor DAC for diffraction imaging at X-ray FELs

2016 IEEE NUCLEAR SCIENCE SYMPOSIUM, MEDICAL IMAGING CONFERENCE AND ROOM-TEMPERATURE SEMICONDUCTOR DETECTOR WORKSHOP (NSS/MIC/RTSD)(2016)

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摘要
The PixFEL project aims at substantially advancing the state of the art in the field of 2D X-ray imaging for application at the next generation free electron laser (FEL) facilities. The collaboration intends to take advantage of cutting-edge microelectronic technologies and innovative design and architectural solutions, to build a large area focal plane detector based on an active edge sensor interconnected to a dual layer front-end chip with on board memory. For this purpose, the groups participating in the project are developing the fundamental building blocks for the detector, including slim edge sensors, a low noise analog front-end with dynamic compression feature and a high resolution and low power ADC. This work focuses on the design and characterization of the ADC. An interleaved SAR ADC architecture was adopted to obtain a good trade-off between power, conversion speed and area occupation. The design has been carried out in a 65 nm CMOS technology. Different test structures have been designed and tested as stand-alone circuits, with an area going from 0.00563 mm 2 to 0.0072 mm 2 . The maximum DNL and INL obtained from the most promising structure are 1 LSB and 4.4 LSB, respectively. The input noise is around 0.4 LSB. From simulation, the power consumption is 85 μW. An improved ADC version has been included in a recently designed test chip, including an array of 32×32 pixels.
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关键词
dynamic compression feature,conversion speed,area occupation,input noise,power consumption,improved ADC version,split capacitor DAC,diffraction imaging,PixFEL project,cutting-edge microelectronic technologies,innovative design,architectural solutions,active edge sensor,dual layer front-end chip,fundamental building blocks,slim edge sensors,low-noise analog front-end,high-resolution ADC,low-power ADC,CMOS technology,X-ray FEL,2D X-ray imaging,on-board memory,next generation free electron laser facilities,large-area focal plane detector,time interleaved SAR ADC architecture,designed test chip,size 65.0 nm,power 85.0 muW,word length 10.0 bit
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