Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET

We report an accurate extraction technique of effective mobility (mu(eff)) by considering gate-bias (V-GS) dependent effective inversion charges (Q(inv,eff)) as a normalized correction factor (sigma(V-GS)) when using the gate-to-source/drain capacitance-voltage (C-V) measurement in a p-channel Si/SiGe MOSFET with a floating body structure. In the proposed technique, two different capacitance-voltage configurations: a gate-to-source/drain (CG-SD) configuration without body contact and a gate-to-source/drain/body (CG-SDB) configuration with body contact are utilized for the accurate extraction of mu(eff).