Prepare the way to manufacture a patternable metallized substrate for W-UFEA by use of a DIBD

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC(1995)

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摘要
A new improved dual ion beam deposition method is introduced in which one can first clean the field emitter array matrix surface thoroughly through a 3�� low energy assisted ion beam bombardment source, then deposit metallized thin films sequentially through a 4�� focused ion beam deposition source. Enhanced film density and hardness has been achieved by the use of the bombardment of assisted source during deposition.
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关键词
electron field emission,ion beam,focused ion beam,tungsten,ion beam applications,thin film,sputter deposition
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