Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning

Yuichi Ohsawa,H. Yoda,Naoharu Shimomura,Satoshi Shirotori,Shinobu Fujita,Katsuhiko Koi, B. Altansargai,Soichi Oikawa,Mariko Shimizu,Y. Kato,Tomoaki Inokuchi,Hideyuki Sugiyama,Mizue Ishikawa, T. Ajay,Kazutaka Ikegami,S. Takaya,Atsushi Kurobe

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2018）

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摘要

Our new proposal of voltage-control spintronics memory (VoCSM) in which spin-orbit torque in conjunction with the voltage-control-magnetic-anisotropy effect works as the writing principle showed small switching current of 37 mu A for about 350 KBT switching energy. This indicates VoCSM's writing efficiency is so high that VoCSM would be applicable for deep learning memories requiring ultra-low power consumption.

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关键词

Magnetic memory,nonvolatile memory,magnetic tunneling,magnetic devices,learning (artificial intelligence),Nanopatterning

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