BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits（2018）
摘要
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates. In this paper, the TIGFET technology has been benchmarked against several beyond-CMOS devices. The benchmarking techniques followed a similar approach used by the Nanoelectronic Resea...
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关键词
Logic gates,Field effect transistors,Adders,Benchmark testing,Delays,Performance evaluation
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