Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that the electrons in the isolated nanowire channel do not suffer from trapping effects. However, the dc current level measured at high drain and gate vo...