Heterogeneous MOS microring resonators

Xue Huang,Di Liang,Chong Zhang,Geza Kurczveil,Xuema Li,Jiaming Zhang,Marco Fiorentino,Raymond G. Beausoleil

2017 IEEE Photonics Conference (IPC)（2017）

引用 12|浏览32

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摘要

We demonstrate a heterogeneous microring resonator with integrated InP-dielectric-Si metal-oxide-semiconductor (MOS) capacitor by high-k dielectric wafer bonding. HfO ₂ is used for its extremely high k value (20-30) and enables optical tuning range more than twice better than Al ₂ O ₃ based MOS devices.

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关键词

MOS devices,extremely high k value,high-k dielectric wafer bonding,metal-oxide-semiconductor capacitor,integrated InP-dielectric-Si,heterogeneous MOS microring resonators,HfO2,Al2O3,InP,Si

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