Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Dong-Hyeok Son,Young-Woo Jo,Chul-Ho Won,Jun-Hyeok Lee,Jae Hwa Seo,Sang-Heung Lee,Jong-Won Lim,Ji Heon Kim,In Man Kang,Sorin Cristoloveanu,Jung-Hee Lee

Solid-State Electronics（2018）

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摘要

•Normally-off was achieved by self-terminating TMAH wet etching.•Hysteresis of threshold voltage was smaller than 50 mV.•Self-terminating recess showed good distribution of threshold voltage for 30 devices.

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关键词

Normally-off,Gate recess,Self-terminating wet etching,TMAH solution,Negligible hysteresis

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