The high-thermal stability and ultrafast phase change memory based on Ge1.6Te-GaSb nano-composite alloys
JOURNAL OF ALLOYS AND COMPOUNDS(2017)
摘要
Solving the contradictory between data retention and switching speed has been the subject of numerous investigations on phase change materials. Towards this end, Ge1.6Te-GaSb nano-composite is proposed, which combines advantages of fast crystallization speed and high thermal stability. The characterization results elucidate that doped materials exhibit a high crystallization temperature due to the enhanced stability of the amorphous state associated with the generated larger energy barrier. Furthermore, the reversible electrical switching capability of the phase-change devices is improved in terms of an ultrafast speed of 5 ns with Sb-rich GaSb addition. A good endurance of 20 K and long data retention are achieved simultaneously, indicating that Sb-rich GaSb incorporation into Ge1.6Te alloy is a promising material for high-temperature performance applications. (C) 2017 Elsevier B.V. All rights reserved.
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关键词
High stability,Fast switching speed,GeTe,GaSb,Doping
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