Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique

Symposium on VLSI Technology-Digest of Technical Papers(2017)

引用 7|浏览143
暂无评分
摘要
A novel BSC circuit with tunable current starved buffers demonstrates higher sensitivity, scalability & accurate statistical characterization of radiation-induced SET pulse waveforms & flip-flop SER in 14nm tri-gate CMOS, thus enabling improved SER estimation & analysis for a range of supply voltages including NTV.
更多
查看译文
关键词
statistical characterization,radiation-induced pulse waveforms,flip-flop soft errors,trigate CMOS,back-sampling chain technique,BSC technique,tunable current starved buffers,radiation-induced SET pulse waveforms,flipflop SER,SER estimation,NTV,size 14 nm
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要