InGaAsBi materials grown by gas source molecular beam epitaxy

Likun Ai,Shuxing Zhou,Ming Qi,Anhuai Xu, Shumin Wang

Journal of Crystal Growth（2017）

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摘要

•In1−yGayAs1−xBix grown in low growth temperature is designed and applied.•In0.53Ga0.47As buffer layers were used in In1−yGayAs1−xBix epilayers grown.•A mobility of 5700cm2/Vs is realized in In1−yGayAs1−xBix with xBi>1.5%.•The Bi content up to 3.1% in In1−yGayAs1−xBix were achieved.

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关键词

B2. InGaAsBi,B1. Bismuth compounds,A3. Gas source molecular beam epitaxy (GSMBE),B2. Semiconducting III-V materials,B1. InP

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