A 35 Gb/s silicon photodetector for 850 nm wavelength applications

Monireh Moayedi Pour Fard,Christopher Williams,Glenn E. R. Cowan,Odile Liboiron-Ladouceur

2016 IEEE Photonics Conference (IPC)（2016）

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摘要

A novel silicon photodetector (Si-PD) fabricated on a silicon-on-insulator (SOI) platform generates a clear 35 Gb/s eye diagram at 12 V reverse-bias voltage. The Si-PD has a responsivity of 0.15 A/W and dark current of 0.4 nA at this bias voltage.

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关键词

silicon photodetector,Si-PD fabrication,silicon-on-insulator,SOI,responsivity,dark current,bit rate 35 Gbit/s,voltage 12 V,current 0.4 nA,wavelength 850 nm,Si

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