Raman spectroscopy studies of spin-wave in V2O3 thin films

We present studies of the enhancement of spin-wave intensity and thickness dependence of spin-wave frequency in V2O3 thin films using Raman spectroscopy. Our results show that the intensity of spin-wave at similar to 450 cm(-1) can be enhanced with a 633 nm laser rather than a 514 nm laser. The enhancement of spin-wave intensity is due to a resonance effect correlated with the on-site V 3d-3d Coulomb energy. A thickness dependence study shows that as the film thickness increases, the frequency of spin-wave at similar to 450 cm(-1) has a redshift, while the frequency of the A(g) phonon at similar to 525 cm(-1) has negligible shift. In comparison to the thickness dependence of the XRD results, we conclude that the spin-wave at similar to 450 cm(-1) in V2O3 exists in the basal a-b plane, and the Raman study of the spin-wave provides a sensitive method for investigating the lattice and/or structure properties of crystals.