Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method

Solid-State Electronics（2016）

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摘要

•Analytical model for random dopant fluctuation in DG MOSFET.•Analysis of electrical characteristics of DG MOSFET with an impurity atom.•Macroscopic modeling method and Green’s function based analytical DG MOSFET model.

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关键词

Random dopant fluctuation,Double-gate metal-oxidesemiconductor transistor,Analytical model,Macroscopic modeling method,Green’s function

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