Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

•In presence of silicon oxide/nitride capping bilayer we observe substantial boron loss in silicon junction submitted to thermal anneal.•Boron dose loss is driven by the segregation at the interface, and the enhanced boron diffusivity in oxide which is modulated by the hydrogen content.•We have developed a model to describe the hydrogen dynamics in the samples and the boron diffusivity as function of the hydrogen content.•We have postulated that boron diffuses in oxide through long hop mechanism, considering mobile and immobile boron species.