Comparative study on noise characteristics of As and Sb-based HEMTs

Summary form only given. We comparatively study the RF characteristics including f _T and the noise for InGaAs and InSb HEMTs by using the quantum-corrected Monte Carlo simulation. In the InSb HEMT, the electrons are rather easily heated owing to the smaller m*. Then, it tends to exhibit the larger velocity variance for a single electron σ _v ² and thus the larger current variance <;ΔI _ds ² >. On the other hand, the InSb HEMT exhibits the higher g _m and thus the higher f _T even at low V _ds . Then, it overcomes the inevitable nature of being easily heated by the ability of the low V _ds operation and also the higher f _T . Eventually, the InSb HEMT exhibits the lower NF _min .