Vapor deposition of copper-manganese interconnects

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)(2016)

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摘要
Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.
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关键词
interconnects,through silicon vias,chemical vapor deposition,copper,manganese,diffusion barrier,void-free filling
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