Magnetic thin-film inductors for monolithic integration with CMOS

Noah Sturcken,Ryan Davies,Hao Wu,Michael Lekas,Kenneth L. Shepard, K. W. Cheng,Chun-Kuang Chen, Y. S. Su,Chung-Hao Tsai, K. D. Wu,Jeff Wu,Y. C. Wang,K. C. Liu,C. C. Hsu,Chih-Sheng Chang, W. C. Hua,Alex Kalnitsky

2015 IEEE International Electron Devices Meeting (IEDM)（2015）

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摘要

This paper presents the fabrication, design and electrical performance of magnetic thin-film inductors for monolithic integration with CMOS for DC-DC power conversion. Magnetic core inductors were fabricated using conventional CMOS processes to achieve peak inductance density of 290nH/mm2, quality factor 15 at 150MHz, current density exceeding 11 A/mm2 and coupling coefficient of 0.89 for coupled inductors.

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关键词

magnetic thin-film inductor,monolithic integration,CMOS,DC-DC power conversion,magnetic core inductor,quality factor,current density,complementary metal oxide semiconductor,frequency 150 MHz

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