Directed Self-assembly of Silicon Nanocubes Fabricated by Nano Imprint-Lithography

The fabrication, electrical characterization and self-assembly of silicon nanocubes (SiNCs) is reported. Arrays of highly doped SiNCs featuring edge lengths of 110 nm are fabricated in large yields on silicon-on-insulator substrates using nano imprint-lithography as well as wet chemical and dry etching techniques. Interdigitated electrode arrays serve as a platform for the electrical characterization of single SiNCs. Self-assembly of SiNC agglomerates in solution is realized by cube surface functionalization with self-assembled monolayers of trimethoxysilane molecules. Complementary terminal groups form covalent bonds between adjacent particles via Cu(I)-catalyzed alkyne-azide cycloaddition towards bottom-up, directed assembly of functional electrical building blocks.