Investigation of the endurance of FE-HfO 2 devices by means of TDDB studies

Karine Florent,A. Subirats,Simone Lavizzari,Robin Degraeve,Umberto Celano,B. Kaczer,L. Di Piazza,Mihaela Ioana Popovici,Guido Groeseneken,J. Van Houdt

2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2018）

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摘要

Ferroelectric HfO 2 devices are potential candidates for non-volatile memory applications. However, they often exhibit a pinched hysteresis, which requires the application of cycles to “wake-up” the device. In this paper, endurance of FE-Al: HfO 2 MIM is investigated using TDDB measurements. An improvement in TDDB lifetime is observed with cycling. A hypothesis involving rearrangement of defects is proposed to explain this behavior.

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关键词

CVS, Ferroelectricity, HfO2, TDDB, Wake-up

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