NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.
Microelectronics Reliability(2018)
摘要
For more than 10years a major part of MOSFET reliability publications are dealing with (N)BTI. The degradation and recovery mechanism is still not fully understood (Grasser, 2014). New publications demonstrate incessantly the agile debate on this important transistor aging phenomenon.
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关键词
NBTI,Experimental,Modelling,Aging simulation,Verification
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