A Compact And Low Power Bandpass Amplifier For Low Bandwidth Signal Applications In 65-Nm Cmos

2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)(2017)

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摘要
In this paper, we present a compact and low power bandpass amplifier in the frequency range between 1.5 Hz and 21 kHz. It was designed and simulated in a 65-nm standard Complementary Metal-Oxide-Semiconductor process and 1 V power supply. Decreasing the low-cutoff frequency of amplifier to a few Hz in 65-nm technology with modest feedback capacitance is challenging. Thus, this low-cutoff frequency reduction has been performed in two stages: first, by decreasing the OTA's transconductance and second, by using cross-coupled positive feedback that decreased the low-cutoff frequency to around 1 Hz. At the end applying T network-based capacitive feedback in this amplifier decreased the whole capacitance and realized a compact amplifier. The results showed the gain of 30.4 dB for the amplifier and 0.6 mu W dissipation from a 1 V power supply.
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关键词
Bandpass Amplifier, Analog Front End (AFE), Neural amplifiers, Compact and Low power, Low Bandwidth
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