Reliable Power Gating With NBTI Aging Benefits.

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2016)

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摘要
In this paper, we show that negative bias temperature instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime (LT), presents considerable benefits for power-gated circuits. Indeed, it reduces static power due to leakage current, and increases ST switch efficiency, making power gating more efficient and effective over time. The ...
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关键词
Aging,MOSFET,Standards,Degradation,Switching circuits,Integrated circuit modeling
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