Noise Coupling Models in Heterogeneous 3-D ICs.

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2016)

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摘要
Models of coupling noise from an aggressor module to a victim module by way of through silicon vias (TSVs) within heterogeneous 3-D integrated circuits (ICs) are presented in this paper. Existing TSV models are enhanced for different substrate materials within heterogeneous 3-D ICs. Each model is adapted to each substrate material according to the local noise coupling characteristics. The 3-D nois...
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关键词
Substrates,Integrated circuit modeling,Couplings,Silicon,Inductance,Gallium arsenide,Resonant frequency
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