Single-Ended Schmitt-Trigger-Based Robust Low-Power SRAM Cell.

Sayeed Ahmad,Mohit Kumar Gupta,Naushad Alam,Mohd. Hasan

IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2016）

引用 155|浏览63

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摘要

This paper presents a Schmitt-trigger-based single-ended 11T SRAM cell, which significantly improves read and write static noise margin (SNM) and consumes low power. Simulation results show that the cell also achieves the lowest leakage power dissipation among the cells considered for comparison. We also investigate the impact of process, voltage, and temperature variations on various performance ...

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关键词

SRAM cells,Transistors,Inverters,Computer architecture,Microprocessors,Robustness

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