Design of Silicon Photonic Interconnect ICs in 65-nm CMOS Technology.

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2016)

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摘要
This paper describes a design methodology for CMOS silicon photonic interconnect ICs according to CMOS technology scaling. As the CMOS process is scaled, the endurable voltage stress and the intrinsic gain of the CMOS devices are reduced; therefore, a design of the highswing transmitter and high-gain receiver required at the silicon photonic interface becomes much more challenging. In this paper, ...
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关键词
Silicon photonics,Modulation,CMOS integrated circuits,Logic gates,CMOS technology,Optical transmitters,Stress
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