15.5 A 930mW 69dB-DR 465MHz-BW CT 1-2 MASH ADC in 28nm CMOS.

Yunzhi Dong,Jialin Zhao,Wenhua Yang,Trevor C. Caldwell,Hajime Shibata,Richard Schreier,Qingdong Meng,José B. Silva,Donald Paterson,Jeffrey C. Gealow

2016 IEEE International Solid-State Circuits Conference (ISSCC)（2016）

引用 63|浏览117

暂无评分

摘要

The width of RF bands commonly used for cellular telecommunications has grown from 35-to-75MHz for 2G/3G/4G platforms to 100-to-200MHz for today's LTE, and the desire for relaxed image-rejection filtering has pushed the direct IF sampling frequencies to 300+ MHz. This paper presents a continuous-time (CT) multi-stage noise-shaping (MASH) ADC IC that achieves 69dB of DR over a 465MHz signal bandwidth with a combined power consumption of 930mW from ±1.0V/1.8V supplies. The ADC IC is implemented in 28nm CMOS and achieves a peak SNDR of 65dB, a small-signal noise-spectral density (NSD) of −156dBFS/Hz, and a figure-of-merit (FOM) of 156dB over a signal bandwidth of 465MHz.

查看译文

关键词

CMOS,RF bands,cellular telecommunications,2G/3G/4G platforms,LTE,image-rejection filtering,continuous-time multi-stage noise-shaping,ADC IC,power consumption,noise-spectral density,figure-of-merit,FOM,power 930 mW,frequency 465 MHz,size 28 nm,frequency 35 MHz to 75 MHz,frequency 100 MHz to 200 MHz,voltage 1.0 V,voltage 1.8 V

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要