A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory.

Conventional content addressable memory (BCAM and TCAM) uses specialized 10T/16T bit cells that are significantly larger than 6T SRAM cells. A new BCAM/TCAM is proposed that can operate with standard push-rule 6T SRAM cells, reducing array area by 2-5× and allowing reconfiguration of the SRAM as a CAM. In this way, chip area and overall capacitance can be reduced, leading to higher energy efficien...