A Leakage Compensation Design for Low Supply Voltage SRAM.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2016）
摘要
A leakage current compensation design for nanoscale SRAMs is proposed in this paper. The proposed compensation design is composed of a leakage current sensor, which generates a warning signal if the leakage is over a predefined threshold, and a compensation circuit following the sensor, which will be activated to speed up the read operation. At 0.6 V system voltage, the proposed compensation desig...
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关键词
SRAM cells,Leakage currents,Integrated circuit modeling,Delays,Arrays,Power dissipation
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