Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film Transistor
JAPANESE JOURNAL OF APPLIED PHYSICS(2012)
摘要
Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface stability between Mo, Al, and Cu electrode and a-IGZO semiconductor have been investigated before and after air-annealing. No inter-diffusion and interfacial reaction has been observed between Mo and a-IGZO and the turn-on voltage of the Mo electrode TFT was 0 V after annealing. As for Al, Al oxide was formed at the interface, and the number of conduction electrons in a-IGZO increased. Thus, a negative turn-on voltage was observed after air-annealing. As for Cu, Cu diffused into a-IGZO during air-annealing and acted as an acceptor. Therefore the a-IGZO TFT with a Cu electrode had a positive turn-on voltage and sub-threshold slope increased after air-annealing. These results indicate that the transistor performance can be affected by the metal types due to inter-diffusion or interfacial reaction between metal and a-IGZO. (C) 2012 The Japan Society of Applied Physics
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