Electronic Structure Of U(Ru1-Xrhx)(2)Si-2 Studied By Laser Angle-Resolved Photoemission Spectroscopy

We have studied electronic structures of U(Ru1-xRhx)(2)Si-2 employing ultrahigh-resolution laser angle-resolved photoemission spectroscopy to understand the effect of Rh substitution. A hole-like dispersive feature, which presumably has Rh d-band character, was observed in U(Ru1-xRhx)(2)Si-2 for both x = 0 and x = 0.03. However, although a heavy quasiparticle band appears in the hidden-order state of URu2Si2 (x = 0), it was not observed for x = 0.03 over the temperature range studied. In addition, it was found that energy-distribution curves at the Fermi vector of the hole-like band for x = 0.03 behave similarly to the Fermi-Dirac function. We also present the mapping of Fermi surfaces formed by the hole-like band, which stay nearly unaffected by Rh substitution.