Induced Change Of Critical Current Density Profile In Nb/Al-Alox/Nb Josephson Junctions

A technique to induce spatial modulation of critical current density in niobium based Josephson devices by using a selective thermal annealing is reported. By depositing a carbon film onto selected region of the Josephson element it is possible to induce a localized heating, with a spatial resolution less than 1 mu m, exploiting the much higher absorbance coefficient of carbon than the niobium one. The effectiveness of such technique is demonstrated by experimental measurement of the critical current vs. magnetic field, measured at T = 4.2 K, showing that the change of critical current density occurs only in the region corresponding to the absorber film area. Furthermore, the theoretical behaviour, by modelling a suitable step-like junction barrier shape, has been carried out to fit the experimental data in order to verify the selective modulation of critical current. This technique can be very useful in view of quantum computing experiments, Majorana fermions detection and superconducting magnetic sensors.