Dielectric Properties Of The Compositionally Graded Bazrxti2-Xo5 Thin Films Prepared By Sol-Gel Method

The downgraded and upgraded BaZrxTi2-xO5 (x=0, 0.01, 0.02, 0.03 and 0.04) films normal to Pt/Ti/SiO2/Si substrates were prepared by sol-gel method. The microstructure and dielectric properties of the compositionally graded BaZrxTi2-xO5 films were investigated. The single-phase downgraded and upgraded films were obtained as the films were annealed at 900 degrees C for 30 min. The downgraded BaZrxTi2-xO5 film had dense surface, while there were pores in the surface of the upgraded BaZrxTi2-xO5 film. The thicknesses of both upgraded and downgraded BaZrxTi2-xO5 films were about 500 nm. The values of permittivity (epsilon(r)) for the downgraded and upgraded BaZrxTi2-xO5 films were 84 and 100, respectively, at 1 MHz.