Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

Feyza B Oruc,Furkan Cimen,Ayman Rizk,Mohammad A Ghaffari,Ammar Nayfeh,Ali K Okyay

IEEE Electron Device Letters（2012）

引用 46|浏览6

暂无评分

摘要

A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the...

查看译文

关键词

Zinc oxide,Flash memory,Thin film transistors,Charge carrier processes,Atomic layer deposition,Aluminum oxide,Hysteresis

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要