The Vertical Voltage Termination Technique - Characterizations Of Single Die Multiple 600v Power Devices

2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)(2011)

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摘要
Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift regions and to completely insulate the multiple power devices sharing the same backside contact electrode. Power diodes in the range of 600V are fabricated and experimentally tested to validate the concept. The prototypes demonstrated excellent forward and reverse biased static characteristics.
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关键词
high voltage,leakage current,breakdown voltage,silicon,temperature measurement,temperature,metals
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